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| HI-RELGaAlAsIREMITTERS FEATURES * High reliability LPE GaAlAs IRLEDs * High power output * 880nm peak emission * Four wire bonds on chip corners * Hermetically sealed stud package * MIL-S-19500 screening available * No internal coatings OD-50J .013 R .100 .095 .125 6-32 .138 .225 .235 .265 .295 .285 .315 .410 .440 .130 .150 .324 .246 .332 .254 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25C Total Power Output, Po PARAMETERS TEST CONDITIONS IF = 300mA IF = 50mA IF = 300mA IR = 10 A VR = 0V MIN 20 TYP 880 115 5 1.5 40 90 80 25 MAX UNITS mW nm nm Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 1.8 Volts Volts pF sec sec Deg 0.7 0.7 ABSOLUTE MAXIMUM RATINGS AT 25C CASE Power Dissipation1 Continuous Forward Current Reverse Voltage 900mW 450mA 12A 5V Peak Forward Current (10 s, 700Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25C 2Derate linearly above 25C 260C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -65C TO 150C 120C/W Typical 35C/W Typical 150C 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com HI-RELGaAlAsIREMITTERS 1000 900 POWER DISSIPATION (mW) 800 700 600 500 400 300 200 100 0 25 50 75 100 AMBIENT TEMPERATURE (C) 125 150 NO HEAT SINK OD-50J 100 PEAK FORWARD CURRENT, Ip (amps) INFINITE HEAT SINK THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT 10 t = 10 s t = 50 s t = 100 s MAXIMUM RATINGS 1 t Ip T D= t T 0.1 0.01 0.1 1 DUTY CYCLE, D (%) 10 100 TYPICAL CHARACTERISTICS 100 DEGRADATION CURVE IF = 200mA TCASE = 36C 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) 80 RELATIVE POWER OUTPUT (%) 105 90 80 60 70 IF = 450mA TCASE = 42*C NO PRE BURN-IN PERFORMED 40 60 20 50 101 102 103 STRESS TIME, (hrs) 104 0 -100 -80 -60 -40 -20 0 20 40 BEAM ANGLE, (deg) 60 80 100 4 FORWARD I-V CHARACTERISTICS 1.5 1.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, IF (amps) RELATIVE POWER OUTPUT 3 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 2 1 0 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 -25 0 25 50 AMBIENT TEMPERATURE (C) 75 100 100 SPECTRAL OUTPUT 1,000 POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT (%) 60 40 POWER OUTPUT, P (mW) o 80 100 10 20 DC PULSE 10 s, 100Hz 0 750 800 850 900 WAVELENGTH, (nm) 950 1,000 1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com |
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